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RJK03B9DPA 30V, 30A, 10.6m OHM max. N Channel Power MOS FET High Speed Power Switching
Features : | High speed switching |
Capable of 4.5 V gate drive | |
Low drive current | |
High density mounting | |
Low on-resistance | |
Pb-free | |
Halogen-free |
Renesas RJK03B9DPA K03B9 MOSFET IC CHIP QFN8. RJK03B9DPA 30V, 30A, 10.6m OHM max. N Channel Power MOS FET High Speed Power Switching Features :High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free
| Item Condition | New |
|---|---|
| Brand | Renesas |
| Item Location | Delhi |
| Warranty | No Warranty |
| Weight Kg | 0.1000 |
| Country of Manufacture | China |
| Shipping | Same Day if ordered before 6:00 PM |
| Compatible Part No. | 30V, 30A, 10.6m OHM max. N Channel MOS FET |
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